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MCC 161 MCD 161
High Voltage Thyristor Module
ITRMS = 2x300 A ITAVM = 2x165 A VRRM = 2000-2200 V
6 71 542 2 1 3 67 5 4
VRSM VDSM V 2100 2300
VRRM VDRM V 2000 2200
Type
MCC 3
MCC 161-20io1 MCD 161-20io1 MCC 161-22io1 MCD 161-22io1
MCD 3
1
54 2
Symbol ITRMS ITAVM ITSM
Conditions TVJ = TVJM TC = 85C; 180 sine TVJ = 45C; VR = 0 TVJ = TVJM; VR = 0 t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) t = 10 ms (50 Hz) t = 8.3 ms (60 Hz)
Maximum Ratings 300 165 6000 6400 5250 5600 180000 170000 137000 128000 150 A A A A A A A2s A2 s A2s A2 s A/s
Features * International standard package * Direct Copper Bonded Al2O3-ceramic base plate * Planar passivated chips * Isolation voltage 3600 V~ * UL registered, E 72873 * Keyed gate/cathode twin pins Applications * Motor control * Power converter * Heat and temperature control for industrial furnaces and chemical processes * Lighting control * Contactless switches Advantages * Space and weight savings * Simple mounting * Improved temperature and power cycling * Reduced protection circuits
I2dt
TVJ = 45C; VR = 0 TVJ = TVJM; VR = 0
(di/dt)cr
TVJ = TVJM; repetitive, IT = 500 A f = 50 Hz; tP = 200 s; VD = 2/3 VDRM; IG = 0.5 A; non repetitive, IT = ITAVM diG/dt = 0.5 A/s TVJ = TVJM; VDR = 2/3 VDRM RGK = ; method 1 (linear voltage rise) TVJ = TVJM; IT = ITAVM; tP = 30 s tP = 500 s
500 1000 120 60 8 10 -40...125 125 -40...125
A/s V/s W W W V C C C V~ V~ Nm Nm g
(dv/dt)cr PGM PGAV VRGM TVJ TVJM Tstg VISOL Md Weight
50/60 Hz, RMS; t = 1 min IISOL < 1 mA; t=1s Mounting torque (M6) Terminal connection torque (M6) Typical including screws
3000 3600 2.25-2.75 4.5-5.5 125
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated
IXYS reserves the right to change limits, test conditions and dimensions
(c) 2005 IXYS All rights reserved
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0540
MCC 161 MCD 161
Symbol IRRM, IDRM VT VT0 rT VGT IGT VGD IGD IL IH tgd tq QS IRM RthJC RthJK dS dA a Conditions VR = VRRM; TVJ = TVJM Characteristic Values 40 1.36 0.8 1.6 2 2.6 150 200 0.25 10 200 150 2 typ. 150 550 235 0.155 0.078 0.225 0.113 12.7 9.6 50 mA V V m V V mA mA V mA mA mA s s C A K/W K/W K/W K/W mm mm m/s2 Fig. 1 Gate trigger characteristics
IT = 300A; TVJ = 25C For power-loss calculations only (TVJ = TVJM) VD = 6 V; VD = 6 V; TVJ TVJ TVJ TVJ = 25C = -40C = 25C = -40C
VD = 2/3VDRM; TVJ = TVJM VD = 2/3VDRM; TVJ = TVJM TVJ = 25C; VD = 6 V; tP = 30 s diG/dt = 0.45 A/s; IG = 0.45 A TVJ = 25C; VD = 6 V; RGK = TVJ = 25C; VD = 1/2 VDRM diG/dt = 0.5 A/s; IG = 0.5 A TVJ = TVJM; VR = 100 V; VD = 2/3VDRM; tP = 200 s dv/dt = 20 V/s; IT = 160 A; -di/dt = 10A/s TVJ = TVJM -di/dt = 50 A/s; IT = 300 A per thyristor; DC current per module per thyristor; DC current per module Creeping distance on surface Creepage distance in air Maximum allowable acceleration
Dimensions in mm (1 mm = 0.0394")
Fig. 2 Gate trigger delay time
500 IT, 450 A IF 400 350 300 250 200 150 100 50 0 TVJ = 125C TVJ = 25C
(c) 2005 IXYS All rights reserved
2-3
0540
Optional accessories for modules Keyed gate/cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red Type ZY 180L (L = Left for pin pair 4/5) UL 758, style 1385, Type ZY 180R (R = right for pin pair 6/7) CSA class 5851, guide 460-1-1
0.0
0.5
1.0
1.5
V
2.0
VT, VF
Fig 3: Forward current vs. voltage drop per thyristor/diode
MCC 161 MCD 161
6000 50 Hz 80% VRRM 5000 A ITSM, 4000 IFSM 3000 TVJ = 125C 2000 100 1000 TVJ = 125C 50 104 1 t 1 t s 10 0 0 25 50 75 C 100 TC 125
It
2
106
350 A 300 DC
As
2
ITAVM, 250 I
FAVM
TVJ = 45C 105
TVJ = 45C
200 120 rect 150 60 rect 30 rect
180 sin
0 0.001
0.01
0.1
ms
Fig. 4: Surge overload current ITSM, IFSM = f(t)
400 Ptot W 360 320 280 240 200 160 120 80 40 0 0 50 100 150 200 250 A IFAVM, ITAVM 0 25 50 75
DC 180 sin 120 rect 60 rect 30 rect
Fig. 5: I2t versus time per diode
Fig. 6: Max. forward current at case temperature ITAVM/FAVM = f (TC,d)
2000
RthKA K/W 0.1 0.2 0.3 0.5 0.8 1.5 2 RthKA K/W
Ptot
W 1800 1600 1400 1200 1000 800 600 400 200 0
0.02 0.04 0.06 0.1 0.15 0.20 0.30
C 100 TA
125
0
100
200
300
400 A 0 IDAVM
25
50
75
C 100 TA
125
Fig. 7: Power dissipation vs. on-state current and ambient temperature (per thyristor/diode)
0.3 K/W
Fig. 8: Power dissipation vs. direct output current and ambient temperature (three phase rectifier bridge)
RthJC for various condition angles: d DC_ 180 120 60 30 RthJC (K/W) 0.155 0.171 0.184 0.222 0.294
0.2 ZthJC
0.1
30 60 120 180 DC
Constants for ZthJC calculation (DC): i 1 2 3 4 5 Rthi (K/W) 0.012 0.008 0.03 0.073 0.032 ti (s) 0.00014 0.019 0.18 0.52 1.6
0.0 10-3
10-2
10-1
100
101 t
s
102
Fig. 9: Transient thermal impedance junction to case ZthjC at various conduction angles
0540
(c) 2005 IXYS All rights reserved
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